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13007T Transistor Datasheet pdf, 13007T Equivalent. Parameters and Characteristics. All Transistors. 13007T Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES;. ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value.
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Pada postingan kali ini admin akan memberikan informasi datasheet dan persamaan transistor 13007 dan contoh penggunaannya. Transistor ini merupakan jenis transistor bipolar NPN yang dirancang memiliki kecepatan tinggi. Transistor tipe 13007 atau MJE13007 sering digunakan pada sirkuit inverter atau switching yang membutuhkan kecepatan switch tinggi.
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Daftar Persamaan Transistor 13005. Ada beberapa transistor pengganti yang bisa menggantikan tr 13005, karena memiliki karakteristik dan spesifikasi tegangan yang sepadan. Berikut ini adalah contoh daftar persamaan transistor 13005 selengkapnya : 2SC3795. 2SC3795A.
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Semtech Corporation is an American technology company that specializes in the design and manufacture of analog and mixed-signal semiconductors. The company was founded in 1960 and has its headquarters in Camarillo, California. Semtech provides a wide range of products for use in communications, computing, industrial, and consumer applications.
13007D 13007 Transistor NPN 700V 8A TO2203L (Lưng Đồng)
NPN Silicon Transistor. Similar Part No. - 13007B: Manufacturer: Part # Datasheet: Description: Aries Electronics, Inc. 13007: 667Kb / 1P: Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails Nanjing International G. 13007: 40Kb / 1P: Plastic-Encapsulate Transistors
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Rekomend.id - Persamaan Transistor 13007 dan Datasheetnya. Transistor 13007 adalah salah satu jenis transistor daya yang sering digunakan dalam rangkaian elektronik. Transistor ini memiliki kemampuan untuk mengalirkan arus listrik yang cukup besar, sehingga sering digunakan dalam rangkaian catu daya, pengatur kecepatan motor, dan aplikasi elektronik lainnya yang membutuhkan daya besar.
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All features. FULLY CHARACTERIZED AT 125 °C. VERY HIGH SWITCHING SPEED. IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTION TIGHTER STORAGE TIME RANGE. NPN TRANSISTOR. HIGH VOLTAGE CAPABILITY. MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION. LARGE RBSOA. LOW SPREAD OF DYNAMIC PARAMETERS.
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For Switching Power Supply Applications. The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
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Persamaan transistor. Berikut adalah daftar tabel persamaan transistor lengkap yang umum dipakai pada beragam rangkaian elektronika. Untuk informasi datasheet dan data pin transistor pengganti, silakan membuka link pada jenis transistor dengan mengklik-nya. TIPE TRANSISTOR JENIS TRANSISTOR PERSAMAAN; 13003: NPN: 5302D BLD123D BUJ101
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UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications.
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13007 Datasheet - NPN V(BR)CBO=700V, 8A, 2W - 13007 pdf, 13007 pinout, 13007 manual, 13007 schematic, 13007 equivalent, 13007 data.. 2020 January 29, 2021 by pinout. This is one of the transistor types. Part Number: 13007. Function: NPN bipolar power transistor. Package : TO-220-3L Type. Manufacturer: JIANGSU CHANGJIANG ELECTRONICS.
MJE13007 NPN Transistor Datasheet, Pinout, Features & Applications The Engineering Projects
File Size: 126Kbytes. Page: 3 Pages. Description: Bipolar Junction Transistor. Manufacturer: Shenzhen Jingdao Electronic Co.,Ltd. Electronic Components Datasheet Search English Chinese: German : Japanese. Bipolar Junction Transistor 13007: 119Kb / 3P: Bipolar Junction Transistor BU202DL: 116Kb / 3P: Bipolar Junction Transistor BU8403: 119Kb.
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MJE13009SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe MJE13009 is a multiepitaxial mesa NPNtransistor. It is mounted in Jedec TO-220 plasticpackage, intended for use in motor controls,switching regulators, deflection circuits, etc.321TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value.
Datasheet Pinagem Transistor Bipolar NPN MJE13007 / 13007 Características e Substituição
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB. 3. 2.
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Persamaan transistor 13009 - Pada postingan kali ini admin ingin membagikan informasi datasheet, persamaan dan fungsi transistor 13009 pada rangkaian elektronika. Transistor 13009 merupakan transistor bipolar jenis PNP yang biasa digunakan di beragam jenis sistem dan proyek elektronika. Transistor merupakan salah satu jenis komponen.
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NPN Silicon Epitaxial Planar Power Transistor. for high voltage, high-speed power switching application . Absolute Maximum Ratings (T a = 25 OC) Parameter . Symbol .. 13007. Characteristics at T a = 25 O C . Parameter . Symbol : Min. Max. Unit . DC Current Gain : at V CE = 5 V, I C = 2 A h FE. 8 : 40 - Collector Base Cutoff Current . at V.
