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2SC5242 2 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 230 V, IE = 0 ― ― 5.0 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 230 ― ― V hFE (1) (Note 1)
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Data sheet. 2SC5200 Data sheet/English [Jan,2016] PDF: 203KB. Application Note. Surface Mount Small Signal Transistor (BJT) Precautions for use [Jan,2022] PDF: 732KB. Application Note. The thermal stability and thermal design:Bipolar Transistor Application Notes [Mar,2021] PDF: 525KB. Application Note.
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Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. Note 4: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3) Unit: mm JEDEC TO -236MOD JEITA SC -59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Start of commercial production 1982- 10
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Circuit parameters. (1) Matrices showing the relationships between the input and the output by voltage and current This method regards a transistor as a four-terminal circuit network to describe it only with the electrical characteristics of its terminals irrespective of the physical characteristics of the transistor.
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At this time, only Civil case information as specified in CRC 2.503 is available to the public via the online portal. California Rules of Court: Rule 2.503. Public Access. Website is best viewed using the latest version of Internet Explorer* , Microsoft Edge, Mozilla Firefox, or Google Chrome for the PC (running Windows 7 or 10).
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october, 1996 part #39824-002 digital transistor inverter tosvert-130p2 6-pulse input and 12-pulse input operation manual
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KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched "TPH3R10AQM," a 100V N-channel power MOSFET fabricated with Toshiba's latest-generation process, U-MOS X-H.The product targets applications such as switching circuits and hot swap circuits [1] on the power lines of industrial equipment used for data centers and communications base stations.
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TOSHIBA. 2SC5200. JAPAN. Part No. (or abbreviation code) Lot No. Characteristics indicator. Note 2. Note: Printed only on devices manufactured in Japan. Note 2 : A line under a Lot No. identifies the indication of product Labels.
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- The lineup covers 1200V and 650V products - Toshiba Electronic Devices Storage Corporation ("Toshiba") has launched new power devices, the "TWxxNxxxC series," its 3rd generation silicon carbide(SiC) MOSFETs [1][2] that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping today.
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