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The fruitful potential of spin manipulation by proximity effect at the hybridized 2D material / ferromagnet interface for 2D-MTJs is introduced and it is emphasized that hybridization effects need to be taken into account to fully grasp the spin properties when 2D materials are used as ultimately thin interfaces.. Maëlis Piquemal-Banci, R.
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The integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems and discussing h-BN potential for metallic spin filtering are reported.. lis Piquemal-Banci and Regina Galceran and Florian Godel and Sabina Caneva and Marie.
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21, 28 Among 2D materials, 2D ferromagnets (FM) are promising for spintronics as they could lead to a complete 2D MTJ. [41][42][43][44] Departure from usual spin sources would allow the.
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This review focuses on the recent experimental integration of 2D materials, mostly graphene but also h-BN and dichalochogenides, such as MoS2 and WS2, in magnetic tunnel junctions. The main remarkable characteristic of 2D materials is the ability to gain high homogeneous atomic control over their thickness, as this is barely achievable with the usual 3D materials deposited through conventional.
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We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering.. Maëlis Piquemal-Banci 1 , Regina Galceran 1 , Florian Godel 1.
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DOI: 10.1063/1.4943516 Corpus ID: 49221181; Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers @article{PiquemalBanci2016MagneticTJ, title={Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers}, author={Ma{\"e}lis Piquemal-Banci and Regina Galceran and Sabina Caneva and Marie‐Blandine Martin and Robert S. Weatherup and Piran R.
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ABSTRACT: We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on
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Two-dimensional (2D) materials have brought fresh prospects for spintronics, as evidenced by the rapid scientific progress made in this frontier over the past decade. In particular, for charge perpendicular to plane vertical magnetic tunnel junctions, the 2D crystals present exclusive features such as atomic-level thickness control, near.
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We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio calculations, the strength of interaction between ferromagnetic electrodes and graphene monolayers is shown to fundamentally control the resulting spin signal.
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Piquemal-Banci, M. et al. Insulator-to-metallic spin-filtering in 2D-magnetic tunnel junctions based on hexagonal boron nitride. ACS Nano 12 , 4712-4718 (2018). Article CAS PubMed Google Scholar
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Recently, in collaboration with the CNRS - Thales-group (France) and the University of Cambridge (UK), we report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin
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Maëlis Piquemal-Banci 1, Regina Galceran 1, Marie-Blandine Martin 1, Florian Godel 1,. This review focuses on the recent experimental integration of 2D materials, mostly graphene but also h-BN and dichalochogenides, such as MoS 2 and WS 2, in magnetic tunnel junctions. The main remarkable characteristic of 2D materials is the ability to.
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